Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study

Defect states in nitrogen-containing float-zone silicon are investigated both n- and p-type materials using deep-level transient spectroscopy (DLTS) minority-carrier (MCTS). This enables a mapping of the defect landscape entire electronic bandgap an investigation whether properties defects depend on semiconductor type. Two defects, E1/E2 pair E4/E6 pair, investigated, no evidence is found for to